In this work, a non-toxic and environmentally friendly aqueous-solution-based method has been adopted to prepare gadolinium-doped hafnium oxide (HfO₂) gate dielectric thin films. By adjusting the gadolinium (Gd) doping concentration, the oxygen vacancy content, band offset, interface trap density, and dielectric constant of HfGdO_x (HGO) thin films have been optimized. Results have confirmed that HGO thin films with Gd doping ratio of 15 at.% have demonstrated appropriate dielectric constant of 27.1 and lower leakage current density of 5.8 × 10⁻⁹ A cm^-2. Amorphous indium-gallium-zinc oxide (α-IGZO) thin film transistors (TFTs) based on HGO thin film (Gd: 15 at.%) as gate dielectric layer have exhibited excellent electrical performance, such as larger saturated carrier mobility (μ_sat) of 20.1 cm² V^-1 S^-1, high on/off current ratio (I_on/I_off) of ∼10⁸, smaller sub-threshold swing (SS) of 0.07 V decade^-1, and a negligible threshold voltage shift (△V_TH) of 0.08 V under positive bias stress (PBS) for 7200 s. To confirm its potential application in logic circuit, a resistor-loaded inverter based on HGO/α-IGZO TFTs has been constructed. A high voltage gain of 19.8 and stable full swing characteristics have been detected. As a result, it can be concluded that aqueous-solution-driven HGO dielectrics have potential application in high resolution flat panel displays and ultra-large-scale integrated logic circuits.

在这项工作中，已采用一种无毒且环保的水溶液基方法来制备掺g氧化ha（HfO ₂）栅介质薄膜。通过调整the（Gd）的掺杂浓度，可以优化HfGdO _x（HGO）薄膜的氧空位含量，能带偏移，界面陷阱密度和介电常数。结果证实，Gd掺杂率为15 at。％的HGO薄膜具有适当的介电常数27.1和较低的漏电流密度5.8×10 ^-9 A cm ^-2。无定形氧化铟镓锌（α-IGZO）薄膜晶体管（TFT）的基础上HGO薄膜（GD：15原子％）作为栅极介电层已表现出优异的电性能，如较大的饱和载流子迁移（μ_饱和）的20.1 cm ² V ^-1 S ^-1，高的开/关电流比（I _on / I _off）约为^{10 8}，较小的亚阈值摆幅（SS）为0.07 V October ^-1以及可忽略的阈值电压位移（△ V _TH）在0.08 V的正偏压（PBS）下持续7200 s。为了确认其在逻辑电路中的潜在应用，已经构建了基于HGO /α-IGZOTFT的电阻加载逆变器。已检测到19.8的高电压增益和稳定的全摆幅特性。结果，可以得出结论，水溶液驱动的HGO电介质在高分辨率平板显示器和超大规模集成逻辑电路中具有潜在的应用。