The full-spatial decomposition of transverse electric (TE)/transverse magnetic (TM) mode in AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) has been experimentally investigated by introducing self-built light intensity test system mainly composed of angle resolution bracket, Glan–Taylor prism and spectrometer. Through roughening the sapphire sidewall, the extraction efficiency of DUV-LED is improved, for both TE and TM mode light with no polarization selectivity. The introduction of self-built light intensity metrology system has been reflected via scribing the sapphire sidewalls using various laser conditions, which show a reliability in the enhancement validation of the light extraction efficiency. More importantly, the self-built light intensity test system enables effective feedback on epitaxial structures and chip structure design and provides a new perspective to design high efficiency AlGaN-based DUV-LEDs.

中文翻译：

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AlGaN基深紫外发光二极管的TE / TM模式全空间分解

通过引入主要由角度构成的自建光强度测试系统，对AlGaN基深紫外发光二极管（DUV-LED）中的横向电（TE）/横向磁（TM）模式的全空间分解进行了实验研究。分辨率支架，格兰-泰勒棱镜和光谱仪。通过对蓝宝石侧壁进行粗糙化处理，对于没有偏振选择性的TE和TM模式光，DUV-LED的提取效率得以提高。自建光强度计量系统的引入已通过使用各种激光条件对蓝宝石侧壁进行划刻得到了反映，这在光提取效率的增强验证中显示出可靠性。更重要的是，