Abstract Diamond-like carbon (DLC) films were prepared via reactive high-power impulse magnetron sputtering (HiPIMS) using a mixture of argon and a small amount of C2H4 or CH4 gas. Synthesis of the DLC films was based on both plasma-enhanced chemical vapor deposition and physical vapor deposition. At a peak target current of 30 A corresponding to 1.1 A/cm2, the hardness of films prepared with hydrocarbon gas fractions of less than 5% was somewhat higher than the hardness of films prepared via nonreactive Ar HiPIMS. The absence of background due to photoluminescence in the Raman spectra indicated that the hydrogen contents in the films were less than 20%. X-ray photoelectron spectroscopy (XPS) was performed, and the peaks related to the sp3 C in the C 1s core level spectra were investigated. The sp3 C peaks in the C 1s spectra of the films prepared at hydrocarbon gas fractions below 5% were more intense than sp3 C related peaks in the spectra of the films prepared via nonreactive HiPIMS. The sp3 C related peaks accounted for more than 30% of the total at a peak target current of 30 A. The influence of the target current on film properties was also investigated. At peak values of target current exceeding 40 A, the hardness of the films prepared via the nonreactive HiPIMS was somewhat higher than that of the films prepared via reactive HiPIMS. This was predicted from the relationship between the target current and the sp3 C content estimated from the XPS spectra.

中文翻译：

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大功率脉冲磁控溅射系统中添加烃类气体对类金刚石碳膜性能的影响

摘要 使用氩气和少量 C2H4 或 CH4 气体的混合物，通过反应性高功率脉冲磁控溅射 (HiPIMS) 制备类金刚石碳 (DLC) 薄膜。DLC 薄膜的合成基于等离子体增强化学气相沉积和物理气相沉积。在对应于 1.1 A/cm2 的 30 A 峰值目标电流下，使用小于 5% 的烃类气体分数制备的薄膜的硬度略高于通过非反应性 Ar HiPIMS 制备的薄膜的硬度。拉曼光谱中由于光致发光而没有背景表明薄膜中的氢含量小于 20%。进行了 X 射线光电子能谱 (XPS)，并研究了 C 1s 核心能级光谱中与 sp3 C 相关的峰。在低于 5% 的烃类气体分数下制备的薄膜的 C 1s 光谱中的 sp3 C 峰比通过非反应性 HiPIMS 制备的薄膜光谱中的 sp3 C 相关峰更强烈。在 30 A 的峰值目标电流下，与 sp3 C 相关的峰值占总数的 30% 以上。还研究了目标电流对薄膜性能的影响。在超过 40 A 的目标电流峰值时，通过非反应性 HiPIMS 制备的薄膜的硬度略高于通过反应性 HiPIMS 制备的薄膜的硬度。这是根据目标电流和从 XPS 光谱估计的 sp3 C 含量之间的关系预测的。在 30 A 的峰值目标电流下，与 sp3 C 相关的峰值占总数的 30% 以上。还研究了目标电流对薄膜性能的影响。在超过 40 A 的目标电流峰值时，通过非反应性 HiPIMS 制备的薄膜的硬度略高于通过反应性 HiPIMS 制备的薄膜的硬度。这是根据目标电流和从 XPS 光谱估计的 sp3 C 含量之间的关系预测的。在 30 A 的峰值目标电流下，与 sp3 C 相关的峰值占总数的 30% 以上。还研究了目标电流对薄膜性能的影响。在超过 40 A 的目标电流峰值时，通过非反应性 HiPIMS 制备的薄膜的硬度略高于通过反应性 HiPIMS 制备的薄膜的硬度。这是根据目标电流和从 XPS 光谱估计的 sp3 C 含量之间的关系预测的。