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Reactive deposition growth of highly (001)-oriented BaSi2 films by close-spaced evaporation
Materials Science in Semiconductor Processing ( IF 4.1 ) Pub Date : 2020-07-01 , DOI: 10.1016/j.mssp.2020.105044
Kosuke O. Hara , Shuhei Takizawa , Junji Yamanaka , Noritaka Usami , Keisuke Arimoto

Abstract Barium disilicide (BaSi 2 ) is an emerging light-absorbing material for earth-abundant thin-film solar cells. Here, we report scalable and rapid deposition of BaSi 2 films by close-spaced evaporation. In this method, BaAl 4 –Ni evaporation source generates Ba gas, which is deposited on a closely-placed Si(001) substrate. The reaction between deposited Ba atoms and Si substrates yields compositionally homogeneous BaSi 2 films through the depth, as evidenced by X-ray diffraction and Auger electron spectroscopy. Although the present BaSi 2 films suffer from cracking and exfoliation issues caused by thermal strain, exfoliation is successfully suppressed by lowering the substrate temperature using a reflector. Electron backscatter diffraction and X-ray diffraction analyses show that the dominant orientation of the BaSi 2 films is (001). A considerably large single-orientation area more than 68 μ m was observed, which is the largest among previously reported BaSi 2 films.

中文翻译:

高度(001)取向的BaSi2薄膜通过紧密间隔蒸发的反应沉积生长

摘要 二硅化钡(BaSi 2 )是一种新兴的吸光材料,用于地球上丰富的薄膜太阳能电池。在这里,我们报告了通过紧密间隔蒸发的 BaSi 2 薄膜的可扩展和快速沉积。在这种方法中,BaAl 4 -Ni 蒸发源产生的 Ba 气体沉积在紧密放置的 Si(001) 衬底上。X 射线衍射和俄歇电子能谱证明,沉积的 Ba 原子和 Si 衬底之间的反应在整个深度上产生组成均匀的 BaSi 2 膜。尽管现有的BaSi 2 膜存在由热应变引起的开裂和剥落问题,但是通过使用反射器降低衬底温度成功地抑制了剥落。电子背散射衍射和X射线衍射分析表明BaSi 2 薄膜的主要取向是(001)。
更新日期:2020-07-01
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