Abstract We report on realization and low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemical vapor deposition and the device is fabricated in a Hall-bar configuration. The longitudinal resistances across the SLG-tBLG junction (cross-junction resistances) on the two sides of the Hall bar are measured. In the quantum Hall regime, the measurements show that the measured cross-junction resistances exhibit a series of new quantized plateaus and the appearance of these resistance plateaus can be attributed to the presence of the well-defined edge-channel transport along the SLG-tBLG junction interface. The measurements also show that the difference between the cross-junction resistances measured on the two sides of the Hall-bar provides a sensitive measure to degeneracy lifting of the Landau levels in the tBLG layer. Temperature dependent measurements of the cross-junction resistance are also carried out and the influence of the transverse bulk transport on the edge channel transport along the SLG-tBLG junction interface are extracted. These results enrich the understanding of the charge transport across interfaces in graphene hybrid structures and open up new opportunities for probing exotic quantum phenomena in graphene devices.

中文翻译：

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单层扭曲双层石墨烯结的实现和传输研究

摘要 我们报告了单层石墨烯 (SLG)-扭曲双层石墨烯 (tBLG) 结器件的实现和低温传输研究。该器件中的 SLG-tBLG 结是通过化学气相沉积生长的，并且该器件以霍尔棒结构制造。测量霍尔条两侧 SLG-tBLG 结的纵向电阻（交叉结电阻）。在量子霍尔机制中，测量表明测量的交叉结电阻表现出一系列新的量化平台，这些电阻平台的出现可归因于沿 SLG-tBLG 存在明确定义的边缘通道传输结界面。测量结果还表明，在霍尔条两侧测量的交叉结电阻之间的差异为 tBLG 层中朗道能级的简并提升提供了一种敏感的测量方法。还进行了交叉结电阻的温度相关测量，并提取了横向体传输对沿 SLG-tBLG 结界面的边缘通道传输的影响。这些结果丰富了对石墨烯混合结构中跨界面电荷传输的理解，并为探索石墨烯器件中的奇异量子现象开辟了新的机会。还进行了交叉结电阻的温度相关测量，并提取了横向体传输对沿 SLG-tBLG 结界面的边缘通道传输的影响。这些结果丰富了对石墨烯混合结构中跨界面电荷传输的理解，并为探索石墨烯器件中的奇异量子现象开辟了新的机会。还进行了交叉结电阻的温度相关测量，并提取了横向体传输对沿 SLG-tBLG 结界面的边缘通道传输的影响。这些结果丰富了对石墨烯混合结构中跨界面电荷传输的理解，并为探索石墨烯器件中的奇异量子现象开辟了新的机会。