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Nucleation and growth of Si nanoparticles under different pulse repetition rates without the baffle for nanosecond pulsed laser-ablated deposition
Laser and Particle Beams ( IF 0.9 ) Pub Date : 2020-02-06 , DOI: 10.1017/s026303461900079x
Z. C. Deng , X. X. Pang , X. C. Ding , L. Z. Chu , X. D. Meng , Y. L. Wang

In this article, Si nanoparticle (NP) films were prepared by pulsed laser ablation (PLA) in the argon atmosphere of 10 Pa at room temperature under different pulse repetition rates from 1 to 40 Hz without the baffle. Different from the conventional PLA method, the substrates were placed below and parallel to the ablated plume axis. The obtained films containing NPs were characterized by scanning electron microscopy and Raman spectrometer. The experimental results under constant laser fluence demonstrate the strong dependence of the mean size and the area number density of NPs on the repetition rate. Specifically, with the increase of pulse repetition rate, the mean size of the NPs in the film first decreases and reaches its minimum at 20 Hz, and then increases after 20 Hz, and decreases again till 40 Hz. The area number density shows the contrary trend versus mean size. The in situ diagnostic results of Langmuir probe denote the ablated Si ion density increases monotonously with the increase of repetition rate, while the temperature is almost constant. Combining with the nucleation probability, the growth/aggregation duration of NPs in the “nucleation region” and the effect of the baffle, the influence of pulse repetition rate on the formation of NPs is addressed. It is found that the repetition rate impacts the growth modes of NPs (i.e., growth and aggregation). 1–20, 20–30, and 30–40 Hz, respectively, correspond to growth-, aggregation-, and growth-controlled rate ranges without the baffle; however, 1–10, 10–20, and 20–40 Hz, respectively, correspond to growth-controlled, aggregation/growth-coexisted, and aggregation-controlled rate ranges with the baffle.

中文翻译:

在没有挡板的情况下,在不同的脉冲重复频率下,硅纳米颗粒的成核和生长没有纳秒脉冲激光烧蚀沉积

在本文中,通过脉冲激光烧蚀(PLA)在室温下在10 Pa的氩气气氛中以1至40 Hz的不同脉冲重复频率在没有挡板的情况下制备Si纳米粒子(NP)膜。与传统的PLA方法不同,将基板放置在烧蚀羽流轴的下方并平行于其。通过扫描电子显微镜和拉曼光谱仪表征获得的含有NP的膜。在恒定激光能量密度下的实验结果表明,NPs的平均大小和面积数密度对重复率的强烈依赖性。具体地,随着脉冲重复率的增加,膜中NP的平均尺寸首先减小并且在20Hz达到其最小值,然后在20Hz之后增大,并且再次减小直到40Hz。面积数密度显示出与平均大小相反的趋势。的Langmuir探针的原位诊断结果表明,烧蚀的Si离子密度随重复率的增加而单调增加,而温度几乎恒定。结合成核概率,“成核区域”中NP的生长/聚集持续时间以及挡板的影响,解决了脉冲重复频率对NP形成的影响。发现重复率影响NP的生长模式(即生长和聚集)。1–20、20–30和30–40 Hz分别对应于没有挡板的生长,聚集和生长控制的速率范围;然而,1–10、10–20和20–40 Hz分别对应于挡板的生长控制,聚集/生长共存和聚集控制的速率范围。
更新日期:2020-04-20
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