Accompanied with great advantages in various fields of performance, memristors show huge potential in the next generation of mainstream storage devices. However, their random distribution of resistance switching voltage has always been one of the problems in applications. In this work, a nonvolatile resistive switching memory device was proposed, which employed CdSe/CdS core/shell quantum dots (QDs) assembled as an electrode modification layer with the device configuration of Pt/CdSe–CdS QDs/TaO_x/Ta. The device possesses multiple excellent resistance switching characteristics such as lower and more consistent set/reset threshold voltage and better endurance performance, which is considered as the effect of the electrode modification layer based CdSe/CdS core/shell QDs. A model with an uneven QD/Pt electrode interface was put forward to explain the different resistance switching behaviors, which may be beneficial to the development of the existing research about memristors based on metal oxides and QDs.

中文翻译：

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利用CdSe / CdS核/壳量子点作为电极改性层的非易失性电阻式开关存储器件

忆阻器在性能的各个领域都具有巨大的优势，在下一代主流存储设备中显示出巨大的潜力。然而，它们的电阻开关电压的随机分布一直是应用中的问题之一。在这项工作中，提出了一种非易失性电阻式开关存储器件，该器件采用组装成电极修饰层的CdSe / CdS核/壳量子点（QDs）和Pt / CdSe–CdS QDs / TaO _x的器件配置/ Ta。该器件具有多种优异的电阻切换特性，例如更低和更一致的设置/重置阈值电压以及更好的耐久性能，这被认为是基于电极修饰层的CdSe / CdS核/壳QD的效果。提出了具有不均匀QD / Pt电极界面的模型来解释不同的电阻切换行为，这可能有利于现有的基于金属氧化物和QD的忆阻器研究的发展。