We present a kinetic-inductance-based superconducting memory element with non-destructive readout, femtojoule read and write energies, both read and write shunts, which is writeable with pulses shorter than 400 ps. The element utilizes both a high-kinetic-inductance layer made from tungsten silicide as well as a low-kinetic-inductance layer made from niobium. By using tungsten silicide-which has a long (20 ns) thermal time constant-and measuring bit error rates from 10 MHz to 1 GHz, we were able to verify that the thin-film elements could be operated at a data rate at least as fast as the material thermal time constant with a bit error ratio less than 10-6. We also analyze the margins of the device, and outline the characteristics by which a more efficient device may be designed.

中文翻译：

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具有分流和亚纳秒写入时间的基于动感电感的超导存储元件

我们提出了一种基于动感电感的超导存储元件，具有无损读出、飞焦读写能量、读写分流器，可使用短于 400 ps 的脉冲进行写入。该元件利用由硅化钨制成的高动态电感层以及由铌制成的低动态电感层。通过使用具有长 (20 ns) 热时间常数的硅化钨并测量从 10 MHz 到 1 GHz 的误码率，我们能够验证薄膜元件可以以至少为与材料热时间常数一样快，误码率小于10-6。我们还分析了设备的余量，并概述了可以设计更高效设备的特征。