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Comparison between NIST Graphene and AIST GaAs Quantized Hall Devices
IEEE Transactions on Instrumentation and Measurement ( IF 5.6 ) Pub Date : 2020-06-01 , DOI: 10.1109/tim.2019.2930436
Takehiko Oe , Albert F. Rigosi , Mattias Kruskopf , Bi-Yi Wu , Hsin-Yen Lee , Yanfei Yang , Randolph E. Elmquist , Nobu-Hisa Kaneko , Dean G. Jarrett

Several graphene quantized Hall resistance (QHR) devices manufactured at the National Institute of Standards and Technology (NIST) were compared with GaAs QHR devices and a 100- $\Omega $ standard resistor at the National Institute for Advanced Industrial Science and Technology (AIST). Measurements of a 100- $\Omega $ resistor with graphene QHR devices agreed within 5 $\text{n}\Omega /\Omega $ of the values for a 100- $\Omega $ resistor obtained through GaAs measurements. The electron density of the graphene devices was adjusted at AIST to restore device properties such that operation was possible at low magnetic flux densities of 4–6 T. This adjustment was accomplished by a functionalization method utilized at NIST, allowing for consistent tunability of the graphene QHR devices with simple annealing. Such a method replaces older and less predictable methods for adjusting graphene for metrological suitability. The milestone results demonstrate the ease with which graphene can be used to make resistance comparison measurements among many National Metrology Institutes (NMIs).

中文翻译:

NIST 石墨烯和 AIST GaAs 量化霍尔器件的比较

将美国国家标准与技术研究院 (NIST) 制造的几种石墨烯量子化霍尔电阻 (QHR) 器件与 GaAs QHR 器件和 100- $\欧米茄 $ 国家先进工业科学与技术研究所 (AIST) 的标准电阻器。测量 100- $\欧米茄 $ 电阻器与石墨烯 QHR 设备在 5 内达成一致 $\text{n}\Omega /\Omega $ 100-的值 $\欧米茄 $ 通过 GaAs 测量获得的电阻。在 AIST 调整石墨烯器件的电子密度以恢复器件特性,从而可以在 4-6 T 的低磁通密度下运行。这种调整是通过 NIST 使用的功能化方法完成的,允许石墨烯的一致可调性带简单退火的 QHR 器件。这种方法取代了用于调整石墨烯的计量适用性的旧的和不太可预测的方法。里程碑结果表明,石墨烯可轻松用于在许多国家计量机构 (NMI) 之间进行电阻比较测量。
更新日期:2020-06-01
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