Abstract In this manuscript, the structural and magnetic properties of a 55Mn+ ion-implanted unintentionally doped β - Ga 2 O 3 single crystal are investigated. The implanted Mn + ions cause crystalline degeneration due to the formation of defects in the surface of the substrate. Room temperature ferromagnetism (FM) is observed in the samples with implantation doses of 5 × 10 14 cm - 2 , 1 × 10 15 cm - 2 and 5 × 10 15 cm - 2 . The zero-field-cooled (ZFC)/field-cooled (FC) measurement of magnetization reveals that the ion implantation process induces an antiferromagnetic (AFM) phase. The temperature evolution of the remanence asymmetry ( M E ) demonstrates the typical behavior of the exchange bias effect due to the coexistence of FM and AFM phases. Based on the distribution of Mn + ions and defects and the relationship between the remanence asymmetry ( M E ) and the exchange bias field ( H E ), the single domain and core-shell models are used to investigate the exchange bias system. The formation mechanism of the ferromagnetic order is briefly discussed, which is rather different from the one corresponding to the bound magnetic polaron (BMP) model.

中文翻译：

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55Mn+离子注入无意掺杂β-Ga2O3单晶的室温铁磁性和交换偏压观察

摘要 在本手稿中，研究了 55Mn+ 离子注入无意掺杂的 β - Ga 2 O 3 单晶的结构和磁性能。由于在衬底表面形成缺陷，注入的Mn + 离子导致晶体退化。在注入剂量为 5 × 10 14 cm - 2 、1 × 10 15 cm - 2 和 5 × 10 15 cm - 2 的样品中观察到室温铁磁性（FM）。磁化的零场冷却 (ZFC)/场冷却 (FC) 测量表明离子注入过程会引起反铁磁 (AFM) 相。由于 FM 和 AFM 相的共存，剩磁不对称 (ME) 的温度演变证明了交换偏置效应的典型行为。基于Mn + 离子和缺陷的分布以及剩磁不对称性（ ME ）与交换偏置场（ HE ）之间的关系，采用单域和核壳模型研究交换偏置系统。简要讨论了铁磁有序的形成机制，它与束缚磁极化子（BMP）模型对应的机制有很大不同。