Introduction

of alkyl chains is a plausible approach to impart the facile solution processability in regioregular poly (poly-3-alkylthioness) (RR-P3ATS) but drastic fall in the conductivity as a function of increasing alkyl chain length restricted the versatile use of its hexyl substituted derivative (P3HT). In this work, fabrication of large area oriented thin films of RR-P3ATs with varying alkyl chain lengths was successfully demonstrated using ribbon shaped floating film transfer method (FTM). Observed decrease in the molecular orientation with increasing alkyl chain length was explained by enhanced alkyl chain inter-digitation as evidenced by trends of d-spacing estimated from the out-of-plane XRD results. In-plane GIXD revealed edge-on orientation in the thin films of all of the P3ATs prepared by ribbon-shaped FTM, which is highly desired for planer charge carrier transport. Parallel oriented thin film of longest alkyl chain (octadecyl) substituted P3AT poly (3-octadecylthiophene) exhibited a field effect transistor (FET) mobility of 1.9 x 10^-2 cm²/Vs, which is about 4-5 orders of magnitude higher as compared its previously reported values estimated by time-of-flight and FET methods. Thus, fabrication of thin films by FTM leads to versatile choice of RR-P3ATs for solution processing for FETs using common organic solvents without having any detrimental impact of alkyl chain length on the charge carrier mobility.

中文翻译：

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带状FTM制备的大面积规整性聚（3-烷基硫酮）薄膜的分子取向和各向异性电荷传输。

介绍

烷基链是赋予区域规则的聚（poly-3-alkylthioness）（RR-P3ATS）简便溶液加工性的一种可行方法，但是随着烷基链长度的增加，电导率急剧下降，这限制了其己基取代基的广泛使用导数（P3HT）。在这项工作中，使用带状浮膜转移方法（FTM）成功演示了具有不同烷基链长度的RR-P3ATs大面积取向薄膜的制造。观察到的分子取向随烷基链长度的增加而降低，这是由于烷基链相互指合增强所解释的，这是由平面外XRD结果估计的d-间距趋势所证明的。平面GIXD揭示了带状FTM制备的所有P3AT薄膜的边沿取向，这对于平面电荷载流子运输是非常需要的。最长烷基链（十八烷基）取代的P3AT聚（3-十八烷基噻吩）的平行取向薄膜显示的场效应晶体管（FET）迁移率为1.9 x 10^-2 cm ² / Vs，与之前报道的通过飞行时间和FET方法估算的值相比，大约高4-5个数量级。因此，通过FTM薄膜的制造导致RR-P3AT的广泛选择，从而可以使用普通的有机溶剂对FET进行溶液处理，而不会对烷基链长度对电荷载流子迁移率产生任何不利影响。