Co-hyperdoped silicon is fabricated on single crystalline Si substrate by using femtosecond-laser pulses in a mixed gas of ${{\rm SF}_6}$ and ${{\rm NF}_3}$ with different ratios. With the increase of the proportion of ${{\rm NF}_3}$ in the mixed gas, the co-hyperdoped silicon shows increased crystallinity but decreased sub-bandgap absorption. Photodetectors are fabricated based on these samples without high-temperature thermal annealing. With the increase of the proportion of ${{\rm NF}_3}$, the photoelectric response first increases and then decreases. Photodetectors based on the co-hyperdoped (${{\rm NF}_3}/{{\rm SF}_6}$, 35/35 kPa) material without high-temperature thermal annealing demonstrate high performance on photoresponsivity (${6}\;{\rm A}\;{{\rm W}^{ - 1}}@{ - 5}\;{\rm V}$ for 1050 nm), which is an order of magnitude higher compared with the photodetector made from S-hyperdoped silicon. The photoconductive gain accounts for the high responsivity.

中文翻译：

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飞秒激光在混合SF ₆ / NF ₃气氛中制造的共掺杂硅光电探测器的响应度提高

通过在具有不同比率的$ {{\ rm SF} _6} $和$ {{rm NF} _3} $的混合气体中使用飞秒激光脉冲，在单晶Si衬底上制造共掺杂硅。随着混合气体中$ {{\ rm NF} _3} $的比例增加，共掺杂硅显示出增加的结晶度，但降低了子带隙吸收。基于这些样品的光电探测器无需高温热退火即可制造。随着$ {{\ rm NF} _3} $的比例的增加，光电响应首先增大，然后减小。基于共掺杂（$ {{\ rm NF} _3} / {{\ rm SF} _6} $，35/35 kPa）的材料在没有高温热退火的情况下表现出对光响应的高性能（$ {6} \; {\ rm A} \; {{\ rm W} ^ {-1}} @ {-5} \ ；对于1050nm而言，{\ rm V} $），与由S-超掺杂硅制成的光电检测器相比，高了一个数量级。光电导增益占高响应度。