The present work aims to investigate the crystallization behavior of VS55 in the presence of graphene oxide (GO) by Differential Scanning Calorimetry (DSC) and Cryomicroscopy system. The DSC results show that the higher GO concentration increase crystallization enthalpy H_f for 2.1M&4.2M VS55 but has little effects on 8.4M VS55 during cooling processes. The recrystallization enthalpy H_Td of VS55+GO decreased with increasing concentrations of GO during warming processes significantly. Especially, when increasing both cooling and warming rates, the H_Td of VS55 drops more obviously once adding higher concentration of GO, which indicates that the critical cooling rate and warming rate may be smaller for the purpose of practical application. The Cryomicroscopy results show that the crystal regrowth can be watched only for high concentration VS55 (i.e. 8.4M) due to devitrification, and the growth rates become smaller when increasing cooling rates as well as GO concentration, which certainly confirms the results of DSC.

本工作旨在通过差示扫描量热法（DSC）和低温显微镜系统研究在氧化石墨烯（GO）存在下VS55的结晶行为。DSC结果表明，较高的GO浓度会增加2.1M＆4.2M VS55的结晶焓H _f，但在冷却过程中对8.4M VS55的影响很小。随着升温过程中GO浓度的增加，VS55 + GO的重结晶焓H _Td明显降低。特别是，当同时提高冷热率时，H _Td一旦加入较高浓度的GO，VS55的下降趋势就更加明显，这表明临界冷却速率和升温速率对于实际应用可能较小。低温显微镜检查的结果表明，由于失透，只能观察到高浓度VS55（即8.4M）的晶体长大，并且当冷却速率和GO浓度增加时，生长速率变小，这肯定证实了DSC的结果。