A study of the electronic conduction mechanisms and electrically active defects in polycrystalline Sb₂Se₃ is presented. It is shown that for temperatures above 200 K, the electrical transport is dominated by thermal emission of free holes, ionized from shallow acceptors, over the intergrain potential barriers. In this temperature range, the temperature dependence of the mobility of holes, limited by the intergrain potential barriers, is the main contributor to the observed thermal activation energy of the conductivity of 485 meV. However, at lower temperatures, nearest-neighbor and Mott variable range hopping transport in the bulk of the grains turn into the dominant conduction mechanisms. Important parameters of the electronic structure of the Sb₂Se₃ thin film such as the average intergrain potential barrier height ϕ = 391 meV, the intergrain trap density N_t = 3.4 × 10¹¹ cm^–2, the shallow acceptor ionization energy E_A0 = 124 meV, the acceptor density N_A = 1 × 10¹⁷ cm^–3, the net donor density N_D = 8.3 × 10¹⁶ cm^–3, and the compensation ratio k = 0, 79 were determined from the analysis of these measurements.

中文翻译：

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多晶硒化锑中的电子传导机理和缺陷

提出了对多晶Sb ₂ Se _3中电子传导机理和电活性缺陷的研究。结果表明，对于200 K以上的温度，电传输受晶粒间势垒上方浅空穴受体电离的自由空穴的热发射支配。在此温度范围内，受晶粒间势垒限制的空穴迁移率的温度依赖性是观察到的485 meV电导率热活化能的主要贡献者。但是，在较低的温度下，大部分晶粒中的最近邻居和Mott可变范围跳跃传输成为主要的传导机制。Sb ₂ Se电子结构的重要参数₃薄膜，例如平均晶间势垒高度ϕ = 391 meV，晶间陷阱陷阱密度N _t = 3.4×10 ¹¹ cm ^–2，浅受体电离能E _A0 = 124 meV，受体密度N _A = 1× 10 ¹⁷厘米^-3，净施主密度ñ _d = 8.3×10 ¹⁶厘米^-3，并且所述补偿比率ķ = 0，79，从这些测量值的分析来确定。