III-Nitride single nanowire (NW)-based p–i–n diode was fabricated using a top–down etching method and its electrical and optoelectronic characteristics were investigated from room temperature to high operation temperatures up to 150 °C. The NW p–i–n diode exhibited good rectifying I–V properties at all measurement temperatures and the forward current could be further enhanced when the temperature was increased. Simulation-based data fitting revealed that the enhanced conduction was a result of increased carrier concentration inside the NW, especially holes in the drift layer, as well as reduced contact resistance. The reverse leakage current was kept low even at elevated temperatures so that the UV (∼365 nm) responsivity remained high for a wide temperature range, suggesting the feasibility of NW p–i–n diode for rectifying purposes and UV photon detection applications in high-temperature environments.

中文翻译：

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用于高温操作的GaN单纳米线p–i–n二极管

III-氮化物单纳米线（NW）基的p–i–n二极管是采用自顶向下的蚀刻方法制造的，其电和光电子特性已从室温到高达150°C的高工作温度进行了研究。NW p–i–n二极管表现出良好的整流I – V当温度升高时，在所有测量温度和正向电流下的特性均可得到进一步增强。基于仿真的数据拟合显示，增强的传导是由于NW内部载流子浓度增加（尤其是漂移层中的空穴）以及接触电阻减小的结果。即使在高温下，反向泄漏电流也保持较低，因此在宽温度范围内，UV（〜365 nm）的响应度仍然很高，这表明NW p–i–n二极管在高整流和紫外光子检测应用中的可行性温度环境。