Abstract Influence of annealing temperature on the microstructural and electrical properties of sputtered Pt thin films was investigated. Pt thin films were sputtered on oxidized Si substrates and Al2O3 ceramics respectively and then annealed at different temperature for different time. The microstructures and electrical properties of Pt thin-film resistances were investigated. Pt thin films on oxidized Si substrates and Al2O3 ceramics showed different temperature dependent resistance behaviors and crystal growth preference. The temperature coefficient of resistance (TCR) of Al2O3-based resistances was more stable and less affected than the SiO2-based ones, and TCR of SiO2-based ones exhibited continuous increase after two more hours annealing. In addition, the factors that affected TCR were discussed.

中文翻译：

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热退火对溅射在 Si 和 Al2O3 衬底上的 Pt 薄膜的温度相关电阻行为的影响

摘要 研究了退火温度对溅射Pt薄膜微观结构和电学性能的影响。Pt薄膜分别溅射在氧化的Si衬底和Al2O3陶瓷上，然后在不同温度下不同时间退火。研究了铂薄膜电阻的微观结构和电性能。氧化硅衬底和 Al2O3 陶瓷上的 Pt 薄膜显示出不同的温度依赖性电阻行为和晶体生长偏好。Al2O3 基电阻的电阻温度系数 (TCR) 比 SiO2 基电阻更稳定且受影响更小，并且 SiO2 基电阻的 TCR 在再退火 2 小时后表现出持续增加。此外，还讨论了影响TCR的因素。