ABSTRACT Ever since the more-than-decade-old discovery of application of mechanical exfoliation to obtain graphene, this 2-dimensional material was known for its soaring promise in various applications, owing to its excellent properties. Graphene, most popularly grown on metallic substrates by chemical vapour deposition, needs to be transferred onto dielectric substrates for multiple optical and electronic applications. During such complex and expensive transfer steps, defects are introduced into graphene, which deteriorates the quality and thus, properties of graphene. An alternative approach to surmount these problems is the elimination of the transfer process and to directly grow graphene on dielectric substrates, for future electronic and optical applications. This review presents a comprehensive and an up-to-date account of the development of synthesis methods, challenges and future directions for transfer-free graphene growth on dielectric substrates. Special emphasis is given on the fundamentals of growth mechanisms of various transfer-free graphene synthesis processes on dielectric materials.

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介电基板上无转移石墨烯生长：生长机制综述

摘要自从十多年来发现应用机械剥离来获得石墨烯以来，这种二维材料因其优异的性能而在各种应用中的前景广阔。石墨烯最常通过化学气相沉积在金属基材上生长，需要转移到介电基材上以用于多种光学和电子应用。在这种复杂且昂贵的转移步骤中，缺陷会被引入石墨烯中，这会降低石墨烯的质量，从而降低其性能。解决这些问题的另一种方法是消除转移过程并直接在介电基板上生长石墨烯，以用于未来的电子和光学应用。这篇综述对介电基板上无转移石墨烯生长的合成方法、挑战和未来方向的发展进行了全面和最新的说明。特别强调介电材料上各种无转移石墨烯合成过程的生长机制的基本原理。