Narrow band gap semiconductor InSb has attracted tremendous attention due to the high electron mobility, small electron effective mass, and large Landé g-factor, which makes InSb gain potential exploitation in novel electronic and spintronic devices. In addition, with lowering dimension and downscaling size, various quantum phenomena might emerge in low-dimensional InSb structures. In this work, the magneto-transport characteristics of high-quality free-standing InSb single-crystal nanosheets are systematically explored. A large and unsaturated linear magnetoresistance is observed at temperature ranging from 125 K to 300 K. And this linear magnetoresistance exhibits non-monotonic temperature dependence, which is different with previous studies. Further analysis indicates that this phenomenon could be understood by the quantum magnetoresistance model. Thus, the study on the linear magnetoresistance of InSb is helpful to develop the physical model in InSb nanostructure and might e...

中文翻译：

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高质量独立式InSb单晶纳米片的不饱和线性磁阻效应

窄带隙半导体InSb由于其高的电子迁移率，小的电子有效质量和较大的Landég因子而引起了极大的关注，这使得InSb在新型电子和自旋电子器件中获得了潜在的开发潜力。另外，随着尺寸减小和尺寸减小，低维InSb结构中可能会出现各种量子现象。在这项工作中，系统地探索了高质量的独立式InSb单晶纳米片的磁传输特性。在125 K至300 K的温度范围内观察到较大且不饱和的线性磁阻。该线性磁阻表现出非单调的温度依赖性，这与以前的研究不同。进一步的分析表明，这种现象可以通过量子磁阻模型来理解。因此，对InSb的线性磁阻的研究有助于建立InSb纳米结构的物理模型，并可能有助于...