Abstract We investigate the influence of the ZnTe separation layer thickness on the photoluminescence (PL) dynamics of CdTe/ZnTe double quantum dots (DQDs) on Si substrates. The results clarify that the DQD's structure effectively improves the limit of the carrier collection and the thermal stability of the corresponding single-layer QDs. The unusual temperature-dependent PL is explained using the single model for thermal redistribution of carrier states. This model indicates that the main nonradiative process at high temperatures is caused by scattering via multiphonons with longitudinal optical phonon energy of about 19–21.3 meV. The confinement-induced mixing and electron-carrier coupling effects cause blue-shift and enhanced PL intensity. We propose that the separation layer controls carrier dynamics in optoelectronic devices by modulating the thermal escape and e-h pairs in the intermixing layers.

中文翻译：

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ZnTe分离层厚度对Si衬底上CdTe/ZnTe双量子点光学性能的影响

摘要 我们研究了 ZnTe 分离层厚度对 Si 衬底上 CdTe/ZnTe 双量子点 (DQD) 的光致发光 (PL) 动力学的影响。结果表明，DQD 的结构有效地提高了载流子收集的极限和相应单层 QD 的热稳定性。使用载流子态热重新分布的单一模型来解释不寻常的温度相关 PL。该模型表明高温下的主要非辐射过程是由纵向光学声子能量约为 19-21.3 meV 的多声子散射引起的。限制诱导的混合和电子-载流子耦合效应导致蓝移和增强的 PL 强度。