We made a report on the fabrication and characterization of a mechanically exfoliated multilayered gallium selenide-based metal–semiconductor–metal (MSM) photodetector using Ti/Au as metal contacts. A significant increase in photocurrent was observed when the photodetector was illuminated with a 380 nm laser, giving the photoresponsivity, external quantum efficiency, and detectivity of 2.6 A/W, 850%, and 1.0 × 10¹² Jones, respectively, at a power density of 0.35 mW/cm² at room temperature. Experimentally, it was observed that the device shows high photoresponse in both UV and visible regions. The performance of this GaSe-based photodetector was also checked at various temperatures, ranging from room temperature to 120 °C. It was found that the detector was thermally stable, giving a maximum photoresponsivity of 4.5 A/W at 120 °C.

中文翻译：

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GaSe纳米片基宽带光电探测器的高温性能

我们对使用Ti / Au作为金属触点的机械剥离多层硒化镓基金属-半导体-金属（MSM）光电探测器的制造和表征进行了报告。当用380 nm激光照射光电探测器时，观察到光电流的显着增加，在功率密度下，光响应性，外部量子效率和检测率分别为2.6 A / W，850％和1.0×10 ¹² Jones。 0.35毫瓦/厘米²在室温下。实验上观察到，该装置在紫外线和可见光区域均显示出高光响应。还在从室温到120°C的各种温度下检查了这种基于GaSe的光电探测器的性能。发现检测器是热稳定的，在120°C时具有4.5 A / W的最大光响应度。