Electrochemical metallization memories have received much attention as candidates for next generation non-volatile memory applications, due to their fast switching speed, simple structure, high scalability and low energy consumption. Chalcogenide compounds like Ge–Sb–Te-based materials are extensively studied solid electrolytes for such devices and considered within the most promising candidates. In this work, the influence of different electrode materials on bipolar resistive switching characteristics of amorphous Ge–Sb–Te thin films with close composition to 2:2:5, prepared by pulsed laser deposition, is studied. Detailed investigations by current-voltage measurements, secondary ion mass spectrometry and cross-sectional transmission electron microscopy in conjunction with energy-dispersive x-ray spectroscopy are presented. Depending on the utilized electrode material, analog switching (Cu, Ag, Ti), digital switching (Co, Cr, Ta, Al) or no switching (Pt, Au and Cr-CrO x...

中文翻译：

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界面对非晶Ge-Sb-Te薄膜双极电阻切换行为的影响

电化学金属化存储器由于其快速的切换速度，简单的结构，高可扩展性和低能耗而成为下一代非易失性存储器应用的候选者。硫族化物化合物（例如基于Ge–Sb–Te的材料）已被广泛研究用于此类设备的固体电解质，并被认为是最有前途的候选物。在这项工作中，研究了不同的电极材料对通过脉冲激光沉积制备的成分接近于2：2：5的非晶Ge-Sb-Te薄膜的双极电阻转换特性的影响。提出了通过电流-电压测量，二次离子质谱和截面透射电子显微镜结合能量色散X射线光谱学进行的详细研究。