CuCdO₂ delafossite oxide film as an interface layer was coated by sol–gel spin coating on p-Si substrate, and thus an Al/p-Si/CuCdO₂/Al diode was fabricated. Scanning electron microscopy (SEM) with energy dispersive spectroscopy (EDS) was used to obtain an image of the CuCdO₂ oxide film. The temperature-dependent behavior of the diode was studied by current–voltage (I–V) and capacitance/conductance–voltage (C/G–V) measurements over the 100–400 K temperature range. It is observed that the ideality factor (n) decreases and zero-bias barrier height (Φ_b0) increases with an increase in temperature. This abnormal behavior of n and Φ_b0 is attributed to barrier inhomogeneities by assuming Gaussian distribution (GD) at the metal–semiconductor interface. For each temperature, the barrier height values obtained from both the conventional I–V and Norde method show good agreement with each other. The I–V–T characteristics have shown the GD, giving a mean barrier height (\( {\bar{\Phi }}_{b0} \)) of 1.04 eV and a standard deviation (σ_s) of 0.12 V. A modified Richardson plot of [ln(I₀/T²) − q²σ_s²/2k²T² versus q/kT] yields \( {\bar{\Phi }}_{b0} \) and A* as 1.06 eV and 31.21 A cm⁻² K⁻² (indicating an agreement with the theoretical value of 32 A cm⁻² K⁻²), showing the promise of CuCdO₂/Si as temperature sensing with a Schottky junction. In addition, C–V and G–V measurements show that the C value decreases and the G value increases as the frequency increases, depending on a continuous distribution of interface states. Also, the capacitance and the conductance values decrease with increasing temperature. The results suggest that Al/p-Si/CuCdO₂/Al diode can be used for temperature sensing applications.

在p-Si衬底上通过溶胶-凝胶旋涂法涂覆CuCdO ₂铜铁矿氧化物膜作为界面层，从而制造出Al / p-Si / CuCdO ₂ / Al二极管。使用具有能量色散光谱学（EDS）的扫描电子显微镜（SEM）来获得CuCdO ₂氧化物膜的图像。该二极管的温度依赖行为是由电流-电压（研究我- V和电容/电导-电压（）ç / g ^ - V）在100-400 K温度范围的测量。据观察，理想因子（Ñ）减小，零偏置势垒高度（Φ _{b 0}）随着温度的升高而增加。n和Φ的这种异常行为_{b 0}是通过假设在金属-半导体界面的高斯分布（GD）归因于屏障的不均匀性。对于每种温度，通过常规I – V和Norde方法获得的势垒高度值彼此显示出良好的一致性。在我- V - Ť特征已示出的GD，给人一种平均势垒高度（\（{\巴{\披}} _ {B0} \））1.04电子伏特和标准偏差（σ_小号0.12 V的） [ln（I ₀ / T ²） -  q ² σ_小号² /2 ķ ² Ť ²与q / KT ]产率\（{\巴{\披}} _ {B0} \）和甲*为1.06 eV和31.21甲厘米^-2  ķ ^-2（表明与32 A cm ^-2  K ^-2的理论值一致），显示了将CuCdO ₂ / Si用于肖特基结的温度传感的前景。此外，C – V和G – V测量表明，C值降低，并且G值随频率增加而增加，这取决于界面状态的连续分布。而且，电容和电导值随温度升高而降低。结果表明，Al / p-Si / CuCdO ₂ / Al二极管可用于温度传感应用。