In this work we present for the first time the nonvolatile resistive switching behavior of graphdiyne (GDY) film. We developed a simple approach to fabricate large-area homogeneous GDY films at an air/water interface, via catalytic homocoupling of hexaethynylbenzene at ambient temperature. The high uniformity, large size and low surface roughness of the as obtained GDY films to a large extent simplify the typical complex fabrication processes of carbon-based memristors. The rewritable memristors based on this ultrathin GDY film (about 7 nm) exhibit steady nonvolatile resistance switching behavior with excellent data retention capability (>10³ s) and high on/off ratio (about 10³). This is the first report on nonvolatile memristors based on pure continuous ultrathin GDY films which show clear write/erase switching properties. The electrical performances of the GDY memristors are significantly improved when Ag is used as a top electrode, which is likely due to the formation of Ag conductive filaments, as observed by HRTEM measurements. This study demonstrates that GDY films are promising candidates for carbon-based nonvolatile memristors.

中文翻译：

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气-水界面大面积超薄石墨二炔薄膜的合成及其在忆阻器中的应用

在这项工作中，我们首次展示了石墨二炔（GDY）膜的非易失性电阻开关行为。我们开发了一种简单的方法，通过在环境温度下催化乙炔基苯的均相偶合，在空气/水界面处制备大面积均匀的GDY膜。所获得的GDY膜的高均匀性，大尺寸和低表面粗糙度在很大程度上简化了碳基忆阻器的典型复杂制造工艺。基于这种超薄GDY膜（约7 nm）的可重写忆阻器表现出稳定的非易失性电阻切换性能，具有出色的数据保持能力（> 10 ³ s）和高开/关比（约10 ^3））。这是有关基于纯连续超薄GDY薄膜的非易失性忆阻器的首次报道，该薄膜具有清晰的写入/擦除切换特性。当通过HRTEM测量观察到，将Ag用作顶部电极时，GDY忆阻器的电性能得到了显着改善，这很可能是由于Ag导电丝的形成。这项研究表明，GDY薄膜有望成为碳基非易失性忆阻器的候选材料。