3C-silicon carbide (3C-SiC) Schottky barrier diodes (SBDs) on silicon (Si) substrates (3C-SiC-on-Si) have been found to suffer from excessive subthreshold current, despite the superior electrical properties of 3C-SiC. In turn, that is one of the factors deterring the commercialization of this technology. The forward current-voltage (I-V) characteristics in these devices carry considerable information about the material quality. In this context, an advanced technology computer-aided design (TCAD) model is proposed and validated with measurements obtained from a fabricated and characterized platinum/3C-SiC-on-Si SBD with scope to shed light on the physical carrier transport mechanisms, the impact of traps, and their characteristics on the actual device performance. The model includes defects originating from both the Schottky contact and the heterointerface of 3C-SiC with Si, which allows the investigation of their impact on the magnification of the subthreshold current. Furthermore, the simulation results and measured data allowed for the identification of additional distributions of interfacial states, the effect of which is linked to the observed nonuniformities of the Barrier height value. A comprehensive characterization of the defects affecting the carrier transport mechanisms of the investigated 3C-SiC-on-Si power diode is thus achieved, and the proposed TCAD model is able to accurately predict the device current both during forward and reverse bias conditions.

中文翻译：

---

基于缺陷的3C-SiC-Si-Si肖特基势垒二极管行为的模型

尽管3C-SiC具有出色的电性能，但已发现硅（Si）基板（3C-SiC-on-Si）上的3C-碳化硅（3C-SiC）肖特基势垒二极管（SBD）遭受过高的亚阈值电流。反过来，这是阻碍该技术商业化的因素之一。这些设备中的正向电流-电压（IV）特性可携带有关材料质量的大量信息。在此背景下，提出了一种先进的计算机辅助设计（TCAD）模型，并通过从已制造并表征的铂/ 3C-SiC-Si-Si SBD上获得的测量结果进行了验证，并具有对物理载流子传输机制，陷阱及其特性对实际设备性能的影响。该模型包括源自肖特基接触以及3C-SiC与Si的异质界面的缺陷，这使得可以研究它们对亚阈值电流放大率的影响。此外，仿真结果和测量数据可用于识别界面状态的其他分布，其作用与所观察到的势垒高度值的不均匀性有关。因此，可以实现对影响所研究的3C-SiC-on-Si功率二极管的载流子传输机制的缺陷的全面表征，并且所提出的TCAD模型能够在正向和反向偏置条件下准确预测器件电流。仿真结果和实测数据可用于识别界面态的其他分布，其作用与所观察到的势垒高度值的不均匀性有关。因此，可以对影响研究的3C-SiC-on-Si功率二极管的载流子传输机制的缺陷进行全面表征，并且所提出的TCAD模型能够在正向和反向偏置条件下准确预测器件电流。仿真结果和实测数据可用于识别界面态的其他分布，其作用与所观察到的势垒高度值的不均匀性有关。因此，可以对影响研究的3C-SiC-on-Si功率二极管的载流子传输机制的缺陷进行全面表征，并且所提出的TCAD模型能够在正向和反向偏置条件下准确预测器件电流。