As the most popular wide bandgap (WBG) power device, the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been widely adopted in the power electronics applications and brings in the benefits, including reduced switching losses, enhanced switching frequency, and improved power density. However, the switching oscillation and the electromagnetic interference (EMI) become more serious due to the rapid switching speed of SiC MOSFET. Thus, adding RC snubber branch is considered as an effective method to suppress such unwanted oscillation in the early works. In this article, the switching transient of SiC MOSFET with RC snubber is investigated with an analytical model based on the finite-state machine (FSM). The accuracy of the proposed analytical model can be verified by comparisons between the calculated and measured waveforms during the switching transition. In addition, the impacts of the RC snubber on switching oscillation, switching loss, and high-frequency (HF) EMI noise have been comprehensively investigated based on the model, which shows that the added RC snubber can effectively avoid the switching oscillation and reduce the level of HF EMI without increasing switching loss.

中文翻译：

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的影响 $ RC $ 解析模型对SiC MOSFET开关振荡阻尼的抑制作用

作为最流行的宽带隙（WBG）功率器件，碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）已在功率电子应用中被广泛采用，并带来了诸多好处，包括降低了开关损耗，增强了开关频率，并提高了功率密度。但是，由于SiC MOSFET的快速开关速度，开关振荡和电磁干扰（EMI）变得更加严重。因此，在早期工作中，添加RC缓冲支路被认为是抑制此类不必要振荡的有效方法。在本文中，使用基于有限状态机（FSM）的解析模型研究了带有RC缓冲器的SiC MOSFET的开关瞬态。可以通过比较转换过渡期间计算波形和测量波形来验证所提出分析模型的准确性。此外，基于该模型，还全面研究了RC缓冲器对开关振荡，开关损耗和高频（HF）EMI噪声的影响，表明添加的RC缓冲器可以有效避免开关振荡并降低噪声。 HF EMI级别，而不会增加开关损耗。