Threshold voltage and channel mobility of a 1.2-kV planar-channel SiC MOSFET at high junction temperature (Ti) up to 700 °C have been extracted and analyzed for the first time, by virtue of a specially designed short-circuit (SC) measurement technique we developed. Under the SC condition, Ti of the SiC MOSFET can rise significantly within a few microseconds, which can be extracted based on the SC waveforms and thermal calculations. The planar-channel SiC MOSFET investigated in this work can maintain normally-off operation at an elevated Ti up to 700 °C. Furthermore, the underlying mechanisms of the temperature dependence of the threshold voltage and channel mobility are also analyzed. The threshold voltage of the SiC MOSFET exhibits a different temperature dependence over a wide range (120-700 °C) compared with that of Si counterparts, which is attributed to interface traps' response. The channel mobility shows a non-monotonic temperature dependence, due to divergent scattering mechanisms.

中文翻译：

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使用动态短路测量技术对1.2 kV SiC MOSFET进行高温表征

通过特殊设计的短路（SC）测量，首次提取并分析了高达700°C的高结温（Ti）下的1.2kV平面沟道SiC MOSFET的阈值电压和沟道迁移率我们开发的技术。在SC条件下，SiC MOSFET的Ti可以在几微秒内显着上升，这可以根据SC波形和热计算来提取。在这项工作中研究的平面沟道SiC MOSFET可以在高达700°C的高Ti下保持常关工作。此外，还分析了阈值电压和沟道迁移率的温度依赖性的潜在机理。与硅对应物相比，SiC MOSFET的阈值电压在较宽的温度范围内（120-700°C）表现出不同的温度依赖性，这归因于接口陷阱的响应。由于散射机制不同，沟道迁移率显示出非单调温度依赖性。