To obtain the online ON-state resistance (R _dson ) of the SiC power MOSFET, during its operation in the dc solid-state-power controller (dc-SSPC), the drain current (I _d ) and the ON-state voltage (V _dson ) need to be accurately measured in real time. Compared to that of I _d , the measurement of V _dson needs to solve more problems, i.e., the high accuracy, the influence of the operating temperature (T _w ), and the high OFF-state voltage. The drain-source voltage clamp circuit (DVCC) can be accurately used to measure R _dson at low operating temperatures. However, the SiC power MOSFETs, owning the low R _dson characteristics, in the dc-SSPC often operate at the high T _w . Under this high T _w , the existing DVCCs cannot perform well and give inaccurate measurements of V _dson in real time. Therefore, this article presents an innovative design of the DVCC with improved real-time measurement accuracy (c0.5%), over a wide T _w range (25 °C-100 °C). The DVCC is analyzed and tested by integrating into a dc-SSPC for measuring the online R _dson of the SiC power MOSFET at the high T _w of 100 °C. The experimental results validate the accuracy of the proposed DVCC-based measurement method and highlight the potential for its use in the accurate junction temperature measurement.

中文翻译：

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漏源电压钳位电路，用于在线精确测量直流固态功率控制器中SiC MOSFET的导通状态电阻

要获得 SiC功率MOSFET的在线导通状态电阻（R _dson），请在dc固态功率控制器（dc-SSPC）中进行操作，并获得漏极电流（ _Id ）和导通电压（ V _dson ）需要实时准确测量。与I _d相比 ，V _dson的测量 需要解决更多的问题，即高精度，工作温度（T _w ）的影响 以及高截止状态电压。漏源电压钳位电路（DVCC）可以精确地用于在低工作温度下测量R _dson。然而，具有低R _dson的SiC功率MOSFET dc-SSPC的特性通常在高T _w下工作 。在这样高的T _w下 ，现有的DVCC不能很好地工作，并且无法实时测量V _dson。因此，本文呈现具有改进的实时测量精度（C0.5％）的DVCC的创新设计，在宽Ť _瓦特的范围（25°C-100℃）。通过将DVCC集成到dc-SSPC中进行分析和测试，以在100°C的高T _w下测量SiC功率MOSFET 的在线R _dson。实验结果验证了所提出的基于DVCC的测量方法的准确性，并突出了其在精确结温测量中的应用潜力。