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Thermal Performance and Reliability Analysis of a Medium-Voltage Three-Phase Inverter Considering the Influence of High $dv/dt$ on Parasitic Filter Elements
IEEE Journal of Emerging and Selected Topics in Power Electronics ( IF 5.5 ) Pub Date : 2019-11-11 , DOI: 10.1109/jestpe.2019.2952570
Anup Anurag , Sayan Acharya , Subhashish Bhattacharya , Todd R. Weatherford

In recent years, the use of silicon carbide (SiC) power semiconductor devices in medium-voltage (MV) applications has been made possible due to the development of high blocking voltage (10-15 kV)-based devices. While the use of these devices brings in a lot of advantages, the semiconductor devices are exposed to high peak stress (of up to 15 kV) and a very high dv/dt (of up to 100 kV/μs). The high dv/dt across the devices leads to a high dv/dt across other components connected to the system. This makes the effect of the parasitic capacitance across the components to be of paramount importance since an additional current flows through the components and, consequently, through the switching device. This additional current flows during each switching transition and leads to increased switching losses in the device. This article analyzes the effect of these additional losses on the lifetime of the device. The thermal performance of a three-phase inverter power block is provided, and a mission profile (solar irradiance and temperature)-based analysis is carried out to account for the additional junction temperature rise. The rainflow counting method is implemented to identify the mean and amplitude of each thermal cycle. An empirical device lifetime model is used to calculate the number of cycles to failure. Finally, the Palgrem Miner rule is used to quantify the total damage in the device. Comparisons have been carried out on basis of lifetime for both the cases (with and without the influence of parasitic capacitances). This analysis can be helpful in validating the importance of the design of filter inductors in these MV applications.

中文翻译:

考虑高压影响的中压三相逆变器的热性能和可靠性分析 $ dv / dt $ 寄生滤波器元件

近年来,由于基于高阻断电压(10-15 kV)的器件的开发,使得碳化硅(SiC)功率半导体器件在中压(MV)应用中的使用成为可能。尽管使用这些器件带来了很多优势,但半导体器件却承受着高峰值应力(高达15 kV)和非常高的dv / dt(高达100 kV /μs)。设备上的高dv / dt导致连接到系统的其他组件上的高dv / dt。这使得跨组件的寄生电容的影响至关重要,因为额外的电流流经组件,进而流经开关装置。该附加电流在每个开关过渡期间流动,并导致器件中开关损耗增加。本文分析了这些额外损耗对器件寿命的影响。提供了三相逆变器电源块的热性能,并且基于任务曲线(太阳能辐照度和温度)进行了分析,以解决额外的结温上升问题。实施雨流计数方法以识别每个热循环的平均值和幅度。经验设备寿命模型用于计算故障循环次数。最后,使用Palgrem Miner规则来量化设备中的总损坏。在两种情况下(有无寄生电容的影响),都根据寿命进行了比较。该分析有助于验证在这些MV应用中滤波器电感器设计的重要性。
更新日期:2020-04-22
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