In this article, a practical electrothermal SPICE model is proposed based on finite differential method. Other than the conventional Fourier model and the Hefner model, the distribution of excess carriers can be accurately solved by a finite differential method in the SPICE simulation tool. In this method, the electrothermal behavior of the device is modeled by using a semi-mathematic model. In order to verify the modeling results, a self-packaging insulated-gate bipolar transistor (IGBT) module is tested in both static characteristics and dynamic characteristics, and the simulation results of the presented model fit well with the experimental results under different junction temperatures. More importantly, the finite differential method provided in this article is an approach for modeling bipolar devices, and it can also be applied to model widebandgap devices such as a SiC IGBT and a SiC BJT.

中文翻译：

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基于有限差分法的IGBT电热模型

本文提出了一种基于有限差分法的实用电热SPICE模型。除了传统的傅立叶模型和Hefner模型，多余的载流子分布可以通过SPICE仿真工具中的有限差分方法来精确求解。在这种方法中，通过使用半数学模型对设备的电热行为进行建模。为了验证建模结果，测试了自包装绝缘栅双极晶体管（IGBT）模块的静态和动态特性，并且该模型的仿真结果与不同结温下的实验结果非常吻合。更重要的是，本文提供的有限差分方法是一种建模双极型器件的方法，