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Low-loss composite photonic platform based on 2D semiconductor monolayers
Nature Photonics ( IF 35.0 ) Pub Date : 2020-02-24 , DOI: 10.1038/s41566-020-0590-4
Ipshita Datta , Sang Hoon Chae , Gaurang R. Bhatt , Mohammad Amin Tadayon , Baichang Li , Yiling Yu , Chibeom Park , Jiwoong Park , Linyou Cao , D. N. Basov , James Hone , Michal Lipson

The optical properties of transition metal dichalcogenides (TMDs) are known to change dramatically with doping near their excitonic resonances. However, little is known about the effect of doping on the optical properties of TMDs at wavelengths far from these resonances, where the material is transparent and therefore could be leveraged in photonic circuits. We demonstrate the strong electrorefractive response of monolayer tungsten disulfide (WS2) at near-infrared wavelengths (deep in the transparency regime) by integrating it on silicon nitride photonic structures to enhance the light–matter interaction with the monolayer. We show that the doping-induced phase change relative to the change in absorption (|∆n/∆k|) is ~125, which is significantly higher than the |∆n/∆k| observed in materials commonly employed for silicon photonic modulators, including Si and III–V on Si, while accompanied by negligible insertion loss.



中文翻译:

基于二维半导体单层的低损耗复合光子平台

众所周知,过渡金属二卤化物(TMD)的光学性质会随着其激子共振附近的掺杂而发生剧烈变化。但是,对于远离这些共振的波长处的掺杂对TMD光学特性的影响知之甚少,在该共振中材料是透明的,因此可以在光子电路中利用。通过将其集成在氮化硅光子结构上以增强与单层的光-物质相互作用,我们证明了单层二硫化钨(WS 2)在近红外波长(在透明状态下较深)具有很强的电折射响应。我们表明,掺杂引起的相变相对于吸收率的变化(| ∆ n / ∆ k|)为〜125,大大高于| ∆ n / ∆ k |。在硅光子调制器常用的材料中观察到,包括Si和Si上的III–V,同时伴随着可忽略的插入损耗。

更新日期:2020-02-24
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