Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.

中文翻译：

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超薄硼掺杂金刚石的占据电子结构

使用角分辨光电子能谱，我们比较了硼掺杂金刚石的超薄（1.8 nm）δ 层与块状硼掺杂金刚石薄膜（3 μm）的电子能带结构。令人惊讶的是，测量结果表明，除了有效质量的微小变化外，这些样品的电子结构之间没有显着差异，无论它们的物理尺寸如何，除了有效质量的微小变化。虽然这表明，目前还不可能制造出具有量子特性的掺硼金刚石结构，但这也意味着可以制造纳米级掺硼金刚石结构，它保留了体掺杂金刚石的经典电子特性，无需需要考虑量子限制的影响。