A simple self-catalyzed chemical vapor deposition process was conducted to synthesize single-crystalline GaSb nanowires, where Ga droplets were utilized as the catalysts. The as-grown GaSb nanowires exhibited typical p-type semiconductor behavior with the calculated hole mobility of about 0.042 cm² V⁻¹ s⁻¹ The photoresponse properties of the GaSb nanowires were studied by fabricating nanowire photodetectors on both rigid and flexible substrates. The results revealed that the photodetectors exhibited broad spectral response ranging from ultraviolet, visible, to near infrared region. For the device on rigid substrate, the corresponding responsivity and the detectivity were calculated to be 3.86×10³A W⁻¹ and 3.15×10¹³ Jones for 500 nm light, and 7.22×10²A W⁻¹ and 5.90×10¹² Jones for 808 nm light, respectively, which were the highest value compared with those of other reported Ga_1−xIn_xAs_ySb_1−y structure nanowires. Besides, the flexible photodetectors not only maintained the comparable good photoresponse properties as the rigid one, but also possessed excellent mechanical flexibility and stability. This study could facilitate the understanding on the fundamental characteristics of self-catalyzed grown GaSb nanowires and the design of functional nano-optoelectronic devices based on Gasb nanowires.

进行了简单的自催化化学气相沉积工艺以合成单晶GaSb纳米线，其中Ga液滴被用作催化剂。成长中的GaSb纳米线表现出典型的p型半导体行为，计算出的空穴迁移率约为0.042 cm ² V ^-1 s ^-1。通过在刚性和柔性衬底上制造纳米线光电探测器，研究了GaSb纳米线的光响应特性。结果表明，光电探测器表现出从紫外，可见光到近红外区域的宽光谱响应。对于在刚性基板上的器件，相应的响应度和探测度经计算为3.86×10 ³ A W ^-1500 nm的光分别为3.15×10 ¹³ Jones和808 nm的光为7.22×10 ² A W ^-1和5.90×10 ¹² Jones，与其他报道的Ga _{1- x} In _x As相比，这是最高值_y Sb _{1- y}结构纳米线。此外，柔性光电探测器不仅保持了与刚性光电探测器相当的良好光响应特性，而且还具有出色的机械柔性和稳定性。这项研究可以促进对自催化生长的GaSb纳米线的基本特性的了解以及基于Gasb纳米线的功能纳米光电器件的设计。