Abstract Epitaxial growth of AlN films on sapphire substrates prepared by halide vapor phase epitaxy (HVPE) using N2 as N source is reported. The effects of V/III ratio on the growth rate, surface morphology and crystal quality of AlN films are systematically investigated. Compared with traditional HVPE using NH3 as N source, the growth rate of AlN films here increased linearly instead of decrease exponentially as increasing input V/III ratio. The surface morphology of the as-grown AlN films exhibited a periodic stripe structure at low V/III ratio and exhibited a pit-like or grid-like structure at high V/III ratio. The effect of V/III ratio on crystal quality varied under different HCl flow rate. The full width at half maximum (FWHM) of the (0002)- and (10-12)- plane X-ray rocking curves (XRCs) were 108–480 and 495–1083 arcsec, respectively, depending on both the V/III ratio and the growth rate of AlN films.

中文翻译：

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以N2为N源的AlN卤化物气相外延生长研究

摘要 报道了使用 N2 作为 N 源通过卤化物气相外延 (HVPE) 制备的蓝宝石衬底上外延生长 AlN 薄膜。系统地研究了 V/III 比对 AlN 薄膜的生长速率、表面形貌和晶体质量的影响。与使用 NH3 作为 N 源的传统 HVPE 相比，此处 AlN 薄膜的生长速率随着输入 V/III 比率的增加而线性增加而不是呈指数下降。生长的 AlN 薄膜的表面形貌在低 V/III 比下表现出周期性条纹结构，在高 V/III 比下表现出坑状或网格状结构。V/III 比对晶体质量的影响在不同的 HCl 流速下有所不同。(0002)- 和 (10-12)- 平面 X 射线摇摆曲线 (XRC) 的半峰全宽 (FWHM) 分别为 108-480 和 495-1083 弧秒，