Abstract Many studies have shown that Mn4N thin films possess perpendicular magnetic anisotropy (PMA) caused by in-plane tensile strain. Since cubic (LaAlO3)0.3(Sr2TaAlO6)0.7 [LSAT] (0 0 1) has a smaller lattice constant than Mn4N with a mismatch of 0.8%, a compressive strain is expected to be induced in Mn4N epitaxial films grown on an LSAT substrate. We grew Mn4N thin films on an LSAT(0 0 1) substrate by molecular beam epitaxy, and investigated the optimum growth temperature (TS) from the aspects of crystallinity, magnetic properties, and magneto-transport properties. Mn4N films were grown epitaxially at temperatures between TS = 700 and 800 °C with maintaining PMA, and the optimum TS was determined to be approximately 750 °C. In-plane and out-of-plane X-ray diffraction measurements showed that the Mn4N films were under tensile stress in contrast to our prediction. From the thickness dependence of magnetization, a dead layer of approximately 10 nm existed at the Mn4N/LSAT interface. Transmission electron microscopy observation revealed that Mn-N composites other than Mn4N existed in the early stage of MBE growth.

中文翻译：

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通过分子束外延在 (LaAlO3)0.3(Sr2TaAlO6)0.7(001) 衬底上生长的亚铁磁性 Mn4N 薄膜的垂直磁各向异性

摘要 许多研究表明，Mn4N 薄膜具有由面内拉伸应变引起的垂直磁各向异性（PMA）。由于立方 (LaAlO3)0.3(Sr2TaAlO6)0.7 [LSAT] (0 0 1) 的晶格常数比 Mn4N 小，失配率为 0.8%，因此预计在 LSAT 衬底上生长的 Mn4N 外延膜中会产生压缩应变。我们通过分子束外延在 LSAT(0 0 1) 衬底上生长了 Mn4N 薄膜，并从结晶度、磁性能和磁传输性能等方面研究了最佳生长温度 (TS)。Mn4N 薄膜在 TS = 700 和 800 °C 之间的温度下外延生长，同时保持 PMA，最佳 TS 被确定为大约 750 °C。面内和面外 X 射线衍射测量表明，与我们的预测相反，Mn4N 薄膜处于拉伸应力之下。从磁化的厚度依赖性来看，在 Mn4N/LSAT 界面处存在大约 10 nm 的死层。透射电镜观察表明，在 MBE 生长的早期阶段存在除 Mn4N 以外的 Mn-N 复合材料。