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Performance improvement of Y-doped VOx microbolometers with nanomesh antireflection layer
Optics Express ( IF 3.8 ) Pub Date : 2020-02-19 , DOI: 10.1364/oe.386438
Tsung-Han Yeh , Cheng-Kang Tsai , Shao-Yu Chu , Hsin-Ying Lee , Ching-Ting Lee

In the study, the yttrium (Y)-doped vanadium oxide (VOx:Y) films used as the sensitive layers of microbolometers were deposited using a radio frequency magnetron co-sputtering system. The temperature coefficient of resistance (TCR) of the VOx:Y films was enhanced from −1.88%/°C to −2.85%/°C in comparison with that of the VOx films. To further improve the performance of microbolometers, the nanomesh antireflection layer was placed on the top surface of the microbolometers to reduce the infrared reflection. The responsivity, thermal time constant, thermal conductivity, absorptance, and detectivity of the VOx:Y microbolometers with nanomesh antireflection layer were 931.89 ± 48 kV/W, 4.48 ms, 6.19×10−8 W/K, 74.41% and 2.20×108 cmHz0.5W−1, respectively.

中文翻译:

带有纳米网眼减反射层的掺Y VO x微辐射热计的性能改进

在这项研究中,使用射频磁控管共溅射系统沉积了用作微量测辐射热计敏感层的掺钇(Y)的氧化钒(VO x:Y)薄膜。电阻温度系数的VO的(TCR)X:Y薄膜从-1.88%/℃至-2.85%/℃,在与比较增强的VO X薄膜。为了进一步提高测微辐射热计的性能,将纳米网眼抗反射层放置在测微辐射热计的顶表面上,以减少红外反射。具有纳米网状减反射层的VO x:Y微辐射热计的响应度,热时间常数,导热率,吸收率和检测率分别为931.89±48 kV / W,4.48 ms,6.19×10 -8W / K分别为74.41%和2.20×10 8 cmHz 0.5 W -1
更新日期:2020-03-02
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