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Development of ultra-thin doped poly-Si via LPCVD and ex-situ tube diffusion for passivated contact solar cell applications
Solar Energy Materials and Solar Cells ( IF 6.9 ) Pub Date : 2020-06-01 , DOI: 10.1016/j.solmat.2020.110458
Xia Yan , Firdaus Bin Suhaimi , Menglei Xu , Jie Yang , Xinyu Zhang , Qi Wang , Hao Jin , Vinodh Shanmugam , Shubham Duttagupta

Abstract Rear side application of polycrystalline silicon (poly-Si) passivated contacts has demonstrated very high efficiencies for single-junction monocrystalline silicon (mono-Si) solar cells. To further improve the device performance, one possible approach is to apply the passivated contact concept to the front side of the solar cell as well. The front side application requires the use of ultra-thin poly-Si layer in order to suppress parasitic absorption. Suitable ex-situ diffusion process should be developed accordingly without damaging the passivation provided by the very thin interface oxide (iOx). In this work, we prepared symmetric lifetime samples of ultra-thin poly-Si (

中文翻译:

通过 LPCVD 和异位管扩散开发用于钝化接触太阳能电池应用的超薄掺杂多晶硅

摘要 多晶硅 (poly-Si) 钝化触点的背面应用已证明单结单晶硅 (mono-Si) 太阳能电池的效率非常高。为了进一步提高器件性能,一种可能的方法是将钝化接触概念也应用于太阳能电池的正面。正面应用需要使用超薄多晶硅层以抑制寄生吸收。应相应地开发合适的异位扩散工艺,而不会损坏由非常薄的界面氧化物 (iOx) 提供的钝化。在这项工作中,我们制备了超薄多晶硅(
更新日期:2020-06-01
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