Abstract Undoped and Indium doped Zinc Oxide (IZO) nanocrystalline thin films were synthesized via RF magnetron sputtering techniques using home-made cold pressed powder targets. The morphology, crystal structure, elemental analyses were studied using FESEM, AFM, XRD, EDS and XPS techniques. All the films showed hexagonal wurtzite structure, and revealed appreciable variations in (100), (002) and (101) peak intensities with indium doping. The incorporation of In into the ZnO films was confirmed by both EDS and XPS measurements. XPS and Photoluminescence (PL) studies of doped films demonstrated significant reduction of oxygen vacancies (Vo) after incorporation of indium in ZnO lattice at substitutional sites. PL spectra showed convoluted peaks, which correspond to band to band transitions and defect level emissions. The optical studies showed high transmittance of over 90% in the UV–vis region and exhibited the absorption edge near 380 nm. The band gap energy of the films increased from 3.27 eV to 3.42 eV, with In content. In addition, typical rectifying I–V characteristics of SZO/IZO homojunction layers were demonstrated.

中文翻译：

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射频磁控溅射制备铟掺杂ZnO同质结的表征及器件应用

摘要 使用自制的冷压粉末靶材，通过射频磁控溅射技术合成了未掺杂和掺铟氧化锌（IZO）纳米晶薄膜。使用FESEM、AFM、XRD、EDS和XPS技术研究形貌、晶体结构、元素分析。所有的薄膜都显示出六方纤锌矿结构，并且显示出随着铟掺杂在（100）、（002）和（101）峰强度方面的明显变化。通过 EDS 和 XPS 测量证实了 In 掺入到 ZnO 薄膜中。掺杂薄膜的 XPS 和光致发光 (PL) 研究表明，在置换位点处将铟掺入 ZnO 晶格后，氧空位 (Vo) 显着减少。PL 光谱显示出复杂的峰，对应于带间跃迁和缺陷能级发射。光学研究表明，在紫外-可见光区具有超过 90% 的高透射率，并在 380 nm 附近显示出吸收边。随着 In 含量的增加，薄膜的带隙能量从 3.27 eV 增加到 3.42 eV。此外，还展示了 SZO/IZO 同质结层的典型整流 I-V 特性。