Si‐nanoribbon‐based high‐performance field‐effect transistors (FETs) with room temperature (RT)‐deposited dielectric are presented. The distinct feature of these devices is that the high‐quality SiN_x dielectric deposition at RT, directly on the transfer‐printed nanoribbons, is compatible with most flexible substrates. The performance of these FETs (mobility ≈656 cm² V⁻¹ s⁻¹ and on/off ratio >10⁶) is on par with the highest performance of similar devices reported with high‐temperature processes, and significantly higher than devices reported with low‐temperature processes. The transfer and output characteristics of nanoribbon‐based field‐effect transistors under planar, tensile, and compressive bending and multiple bending cycles (100) show excellent mechanical stability of the devices as they retain performance. The device characteristics are also compared with the equivalent simulation data. The excellent response of nanoribbon‐based FETs and the fabrication compatibility with diverse flexible substrates makes the presented approach attractive for flexible electronics applications such as conformal tactile active matrix sensors for e‐skin, where high performance is needed.

中文翻译：

---

在室温下制造的基于纳米带的柔性高性能晶体管

介绍了具有室温（RT）沉积电介质的基于硅纳米管的高性能场效应晶体管（FET）。这些设备的显着特点是，在RT上直接在转印纳米带上的高质量SiN _x电介质沉积与大多数柔性基板兼容。这些FET的性能（迁移率≈656cm ² V ^-1 s ^-1和开/关比> 10 ⁶）与高温工艺中报告的同类设备的最高性能相当，并且显着高于低温工艺中报告的设备。基于纳米带的场效应晶体管在平面，拉伸，压缩弯曲和多次弯曲循环（100）下的传输和输出特性显示出其优异的机械稳定性，因为它们保持了性能。还将器件特性与等效仿真数据进行比较。基于纳米带的FET的出色响应以及与各种柔性基板的制造兼容性，使得该方法对于柔性电子应用具有吸引力，例如需要高性能的用于电子皮肤的共形触觉有源矩阵传感器。