Ambipolar organic field-effect transistors (A-OFETs) allow a significant reduction in the complexity of organic integrated circuits (ICs) because they act as both n- and p-type transistors. In this paper, we report an efficient A-OFET based on the bilayer architecture of p-type poly(benzodithiophene(2-thienyl)-pyrrolopyrrole-dione) (PBDTTPPD) and n-type [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM). By achieving the saturation condition of the dichloromethane (DCM) solvent for preparing the PCBM solution, we successfully obtained a complete bilayer of PCBM and PBDTTPPD and used it as a carrier transport layer in an A-OFET. The A-OFET exhibits clear bipolar transport and operates as an n-type and a p-type transistor in a single device. When a positive bias is applied between the gate electrode and the source electrode, the A-OFET serves as an n-type transistor with an n-channel generated for electron transport at the interface of PCBM and PBDTTPPD. On the other hand, it serves as a p-type transistor with a p-channel generated for hole transport at the interface between PBDTTPPD and SiO 2 when a negative bias is applied. The bipolar transport is modulated by morphology control using a 1,8-diiodooctane (DIO) additive and the PBDTTPPD layer thickness. The optimized A-OFET shows reasonable carrier mobilities for an ambipolar transistor with an average electron mobility of 2.22 × 10 −3 cm 2 V −1 s −1 and an average hole mobility of 2.29 × 10 −3 cm 2 V −1 s −1 . An efficient ambipolar organic transistor (A-OFET) based on the bilayer architecture of p-type poly(benzodithiophene(2-thienyl)-pyrrolopyrrole-dione) (PBDTTPPD) and n-type [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) was demonstrated. The A-OFET exhibits clear bipolar transport and operates as an n-type and a p-type transistor in a single device.

中文翻译：

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具有双层传输通道的可溶液加工双极有机场效应晶体管

双极有机场效应晶体管 (A-OFET) 可显着降低有机集成电路 (IC) 的复杂性，因为它们同时充当 n 型和 p 型晶体管。在本文中，我们报告了一种基于 p 型聚（苯并二噻吩（2-噻吩基）-吡咯并吡咯二酮）（PBDTTPPD）和 n 型 [6,6]-苯基-C 61 双层结构的高效 A-OFET -丁酸甲酯 (PCBM)。通过实现用于制备 PCBM 溶液的二氯甲烷 (DCM) 溶剂的饱和条件，我们成功地获得了 PCBM 和 PBDTTPPD 的完整双层，并将其用作 A-OFET 中的载流子传输层。A-OFET 表现出清晰的双极传输，并在单个器件中作为 n 型和 p 型晶体管运行。当在栅电极和源电极之间施加正偏压时，A-OFET 用作 n 型晶体管，在 PCBM 和 PBDTTPPD 的界面处生成 n 沟道用于电子传输。另一方面，当施加负偏压时，它用作在 PBDTTPPD 和 SiO 2 之间的界面处产生用于空穴传输的 p 沟道的 p 型晶体管。双极传输通过形态控制使用 1,8-二碘辛烷 (DIO) 添加剂和 PBDTTPPD 层厚度进行调制。优化的A-OFET显示了双极晶体管的合理载流子迁移率，平均电子迁移率为2.22 × 10 -3 cm 2 V -1 s -1 和平均空穴迁移率为2.29 × 10 -3 cm 2 V -1 s - 1 . 基于 p 型聚（苯并二噻吩（2-噻吩基）-吡咯并吡咯二酮）（PBDTTPPD）和 n 型双层结构的高效双极有机晶体管 (A-OFET) [6, 6]-苯基-C61-丁酸甲酯(PCBM)被证明。A-OFET 表现出清晰的双极传输，并在单个器件中作为 n 型和 p 型晶体管运行。