We demonstrate silicon-based $p \text{-} n \text{-} p$p-n-p floating-base GeSn heterojunction phototransistors with enhanced optical responsivity for efficient short-wave infrared (SWIR) photodetection. The narrow-bandgap GeSn active layer sandwiched between the $p \text{-} {\rm Ge}$p-Ge collector and $n \text{-} {\rm Ge}$n-Ge base effectively extends the photodetection range in the SWIR range, and the internal gain amplifies the optical response by a factor of more than three at a low driving voltage of 0.4 V compared to that of a reference GeSn $p \text{-} i \text{-} n$p-i-n photodetector (PD). We anticipate that our findings will be leveraged to realize complementary metal-oxide-semiconductor-compatible, sensitive, low driving voltage SWIR PDs in a wide range of applications.

中文翻译：

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具有浮动基极的硅基高响应GeSn短波红外异质结光电晶体管。

我们演示了基于硅的$ p \ text {-} n \ text {-} p $ pnp浮基GeSn异质结光电晶体管，该晶体管具有增强的光学响应能力，可用于有效的短波红外（SWIR）光检测。夹在$ p \ text {-} {\ rm Ge} $ p-Ge集电极和$ n \ text {-} {\ rm Ge} $ n-Ge基极之间的窄带隙GeSn有源层有效地扩展了光检测范围与参考GeSn $ p \ text {-} i \ text {-} n $相比，内部增益在0.4 V的低驱动电压下将光学响应放大三倍以上。引脚光电探测器（PD）。我们预计，我们的发现将被用于实现与金属氧化物半导体兼容的互补型，灵敏的，低驱动电压的SWIR PD，广泛应用于各种应用中。