Utilizing a direct chemical vapor deposition (CVD) approach to allow transfer‐free synthesis of graphene on insulating substrates is appealing. Nevertheless, the quality and uniformity of thus‐grown graphene without the aid of any catalyst stay normally inferior to that of graphene formed on metals by far. This mainly stems from the catalytic inertness of the insulating surface with regard to the decomposition of carbon feedstock. In this respect, delicate methodologies have been devised to date to boost the quality of directly‐grown graphene. In this Minireview, recent advances in the direct CVD growth of graphene on insulators by introducing various gaseous promotors is covered. The effects and mechanisms of different types of promotors on the direct growth are discussed. At the end, existing challenges and future perspectives in this field are further highlighted.

中文翻译：

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气态助剂CVD在绝缘子上石墨烯的直接生长：进展与展望

利用直接化学气相沉积（CVD）方法在绝缘基板上实现石墨烯的无转移合成很有吸引力。然而，这样生长的石墨烯的质量和均匀性通常远不及在金属上形成的石墨烯。这主要源于绝缘表面在碳原料分解方面的催化惰性。在这方面，迄今为止已经设计出了精细的方法来提高直接生长的石墨烯的质量。在此Minireview中，介绍了通过引入各种气态促进剂在绝缘子上进行石墨烯直接CVD生长的最新进展。讨论了不同类型的启动子对直接生长的影响和机理。在最后，