To obtain both high ionization and high deposition rate, a modified global model for a continuous high-power DC magnetron sputtering (C-HPMS) is established by considering the continuous generation of the hot electrons and the high temperature caused by continuous high-power discharge. The results show that the plasma density is on the order of 10 19 m −3 for power densities of only 183 W cm −2 (Al) and 117 W cm −2 (Cu). The ionization rate exceeds 90% of high-power impulse magnetron sputtering (HiPIMS) (peak power density of 564 W cm −2 ) for a DC power density of 180 W cm −2 , and the total diffusion fluxes of the two targets are 26 (Al) and 30 (Cu) times that of conventional HiPIMS, leading to very high deposition rates. The work provides a theoretical basis for the realization of C-HPMS and gives an enlightenment to the development of deposition equipment for continuous high-power discharges.

中文翻译：

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大功率直流放电的建模和等离子体特性

为了同时获得高电离和高沉积速率，通过考虑连续产生的热电子和由于连续大功率放电引起的高温，建立了连续大功率直流磁控溅射（C-HPMS）的改进全局模型。 。结果表明，对于仅183 W cm -2（Al）和117 W cm -2（Cu）的功率密度，等离子体密度约为10 19 m -3。对于180 W cm -2的直流功率密度，电离率超过高功率脉冲磁控溅射（HiPIMS）（峰值功率密度564 W cm -2）的90％，两个靶的总扩散通量为26是传统HiPIMS的（Al）和30（Cu）倍，从而导致非常高的沉积速率。