Artificial synapses based on oxides are essential for constructing brain‐inspired computation systems, due to their dynamically tunable defect concentrations. However, defects in the pristine state of most oxides are usually not sufficient, unavoidably resulting in an irreversible electroforming process, which usually produces undesired side effects, such as device variations and failures. Electroforming‐free memristive devices are realized with single‐phase α‐MoO₃ films. By introducing protons into α‐MoO₃ through annealing in H₂/Ar atmosphere, the destructive electroforming process is avoided, which results in uniform switching behavior with high yield and minimal spatial/temporal variations. In addition, synaptic functions such as short‐term memory and long‐term memory are successfully emulated with the device, and the image memorizing function is embodied by memorizing the letter “Y” out of three letters “X, Y, Z” in a 5 × 5 array.

中文翻译：

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α-MoO3薄膜中基于质子传导的无电铸人工突触

基于氧化物的人工突触由于其动态可调的缺陷浓度，对于构建大脑启发的计算系统至关重要。然而，大多数氧化物的原始状态的缺陷通常是不充分的，不可避免地导致不可逆的电铸过程，这通常会产生不希望的副作用，例如器件变化和故障。自由电铸-忆阻器件实现与单相α-的MoO _3层膜。通过引入质子成α-的MoO ₃通过退火H中₂在/ Ar气氛中，避免了破坏性的电铸过程，从而产生了均匀的开关行为，且产量高且空间/时间变化最小。此外，设备成功模拟了短时记忆和长时记忆等突触功能，并且图像记忆功能通过将字母“ X”，“ Y”，“ Z”中的三个字母“ Y”记忆在一个5×5阵列。