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Copper Oxide Thin Films Synthesized by SILAR: Role of Varying Annealing Temperature
Electronic Materials Letters ( IF 2.4 ) Pub Date : 2020-02-12 , DOI: 10.1007/s13391-020-00205-4
Tuba ÇAYIR TAŞDEMİRCİ

Abstract

To coat CuO thin films on the glass surface, an easily controlled successive ionic layer absorption and reaction method was used. CuO thin films were grown at room temperature. The CuO thin films obtained were annealed for 30 min at 200, 300 and 400 °C. The changes caused by annealing temperature on nanostructured CuO thin films were studied. Structural, morphological, optical and molecular properties of annealed CuO thin films were investigated. For this analysis, X-ray diffraction, Scanning electron microscopy, Atomic force microscopy, RAMAN and Optical absorption spectroscopy (UV–Vis) and Fourier transform infrared spectroscopy devices were used.

Graphic Abstract



中文翻译:

SILAR合成的氧化铜薄膜:退火温度的变化

摘要

为了在玻璃表面上涂覆CuO薄膜,使用了易于控制的连续离子层吸收和反应方法。CuO薄膜在室温下生长。将获得的CuO薄膜在200、300和400°C下退火30分钟。研究了退火温度对纳米结构CuO薄膜的影响。研究了退火CuO薄膜的结构,形态,光学和分子性质。对于此分析,使用了X射线衍射,扫描电子显微镜,原子力显微镜,RAMAN和光学吸收光谱(UV-Vis)以及傅里叶变换红外光谱仪。

图形摘要

更新日期:2020-04-21
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