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Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers
Journal of Electronic Materials ( IF 2.1 ) Pub Date : 2020-02-10 , DOI: 10.1007/s11664-020-07981-7
Hongyu Peng , Tuerxun Ailihumaer , Balaji Raghothamachar , Michael Dudley

In x-ray topography studies, ray tracing simulation has been particularly useful in identifying and characterizing Burgers vectors of dislocations using only one reflection instead of the traditional method of recording at least three reflections and applying \(\vec{g} \cdot \vec{b} = 0\) and \(\vec{g} \cdot \vec{b} \times \vec{l} = 0\) criteria. In this study, ray tracing simulation of expected dislocations in (AlxGa(1–x))0.5In0.5P epitaxial layers on GaAs substrates has been carried out by using well-known expressions for displacement fields around dislocations. By comparing the simulated images with observed images on monochromatic x-ray topographs, the Burgers vectors have been characterized. The x-ray topographs from the (AlxGa(1–x))0.5In0.5P epitaxial layers also reveal a unique pattern consisting of a series of circular dark contrast features from inclusions. These dark circles decrease in size as the center of the inclusions is approached. Ray tracing simulated image of an inclusion assuming a spherical strain field matches well with the experimental image, thus providing information on the level of strain around the inclusion.



中文翻译:

GaAs外延晶片X射线形貌图上位错和夹杂物图像的射线追踪模拟

在X射线地形学研究中,射线跟踪模拟在仅使用一次反射来识别和表征位错的Burgers矢量方面特别有用,而不是使用传统的方法记录至少三个反射并应用\(\ vec {g} \ cdot \ vec {b} = 0 \)\(\ vec {g} \ cdot \ vec {b} \ times \ vec {l} = 0 \)条件。在这项研究中,在(Al x Ga (1– x0.5 In 0.5中预期位错的射线追踪模拟通过使用关于位错周围的位移场的公知表达式来执行GaAs衬底上的P外延层。通过将模拟图像与在单色X射线地形图上观察到的图像进行比较,已对Burgers向量进行了表征。来自(Al x Ga (1– x0.5 In 0.5的X射线地形图P外延层还显示出独特的图案,该图案由内含物的一系列圆形暗对比度特征组成。随着接近夹杂物的中心,这些黑眼圈的尺寸减小。假设球形应变场与夹杂物的光线追踪模拟图像与实验图像匹配得很好,从而提供了夹杂物周围应变水平的信息。

更新日期:2020-02-10
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