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CuO/NiO x thin film–based photocathodes for photoelectrochemical water splitting
Journal of Solid State Electrochemistry ( IF 2.5 ) Pub Date : 2020-02-08 , DOI: 10.1007/s10008-020-04513-5
Hugo L. S. Santos , Patricia G. Corradini , Marcos A. S. Andrade , Lucia Helena Mascaro

Copper oxides are considered to be very promising materials for promoting a hydrogen evolution reaction (HER). However, some CuO features, such as the recombination of charge carriers, electron diffusion length, and the chemical stability need to be improved. In this work, NiOx was studied as co-catalyst to FTO/CuO, and the films were physically characterised by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The photo-electrochemical activity and stability toward the HER were evaluated by depositing films on fluorine-tin doped oxide (FTO) substrate. Although, the CuO (− 3.61 eV) and NiOx (− 1.13 eV) conduction band positions, estimated by UV-Vis diffuse reflectance and the Mott–Schottky measurements, did not allow electronic transfer from CuO to NiOx, the formation of a thin layer of NiOx on CuO was beneficial for the activity of this material. The best CuO/NiOx film exhibited a photocurrent density of − 1.02 mA cm−2 at 0 V vs. RHE, which was higher than that for CuO (− 0.92 mA cm−2). A mechanism of electron transfer between CuO and NiOx is proposed. The absorption of visible light by CuO leads to the generation of electron-hole pair. Part of the photogenerated electrons are trapped by the NiOOH present in the NiOx layer, as demonstrated by XPS. The oxy-hydroxide is reduced to metallic Ni, and this species acts as a catalyst for the hydrogen evolution reaction. Due to the increase in interfacial pH caused by the evolution reaction of H2, the formed metallic Ni can be regenerated to NiOx.



中文翻译:

基于CuO / NiO x薄膜的光电阴极,用于光电化学水分解

氧化铜被认为是促进氢释放反应(HER)的非常有前途的材料。然而,一些CuO特征,例如电荷载流子的复合,电子扩散长度和化学稳定性需要改善。在这项工作中,研究了NiO x作为FTO / CuO的助催化剂,并通过X射线衍射(XRD),X射线光电子能谱(XPS)和扫描电子显微镜(SEM)对薄膜进行了物理表征。通过在氟锡掺杂的氧化物(FTO)衬底上沉积膜来评估其对HER的光电化学活性和稳定性。虽然,CuO(-3.61 eV)和NiO x通过UV-Vis漫反射率和Mott-Schottky测量估计的(-1.13 eV)导带位置不允许电子从CuO转移到NiO x,在CuO上形成一层薄的NiO x有利于活性这种材料。最佳的CuO / NiO x膜在0 V相对于RHE的光电流密度为-1.02 mA cm -2,高于CuO(-0.92 mA cm -2)。提出了CuO和NiO x之间电子转移的机理。CuO对可见光的吸收导致电子-空穴对的产生。部分光生电子被NiO x中存在的NiOOH捕获XPS演示了这一层。羟基氧化物被还原为金属Ni,并且该物种充当氢释放反应的催化剂。由于H 2的析出反应引起的界面pH的增加,形成的金属Ni可以再生为NiO x

更新日期:2020-02-08
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