We report on AlGaAs‐based heterojunction solar cells grown by solid source molecular beam epitaxy (MBE). We investigate InGaP and AlGaAs material quality and we demonstrate significant efficiency improvements by combining the best of each alloy: a thick p‐AlGaAs base with tunable bandgap, and a thin 50 nm n‐InGaP emitter separated by a thin intrinsic AlGaAs layer. We report a certified solar cell conversion efficiency of 18.7% with a 2‐μm‐thick AlGaAs layer and a bandgap of 1.73 eV, suitable for high efficiency Si‐based tandem devices.

中文翻译：

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MBE生长的效率为18.7％的1.73 eV AlGaAs / InGaP异质结太阳能电池

我们报告了通过固体源分子束外延（MBE）生长的基于AlGaAs的异质结太阳能电池。我们研究了InGaP和AlGaAs的材料质量，并结合了每种合金的最佳性能，证明了效率的显着提高：厚的p-AlGaAs基体具有可调节的带隙，以及由薄的固有AlGaAs层隔开的50 nm n-InGaP发射极。我们报告了经认证的太阳能电池转换效率为18.7％，具有2μm厚的AlGaAs层和1.73 eV的带隙，适用于高效的硅基串联器件。