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Redefinition the quasi-Fermi energy levels separation of electrons and holes inside and outside quantum wells of GaN based multi-quantum-well semiconductor laser diodes
Journal of Physics D: Applied Physics ( IF 3.4 ) Pub Date : 2020-02-05 , DOI: 10.1088/1361-6463/ab6a37
Ding Li 1, 2, 3 , Liefeng Feng 1 , Wei Yang 2 , Xiufang Yang 1 , Xiaodong Hu 2 , Cunda Wang 1, 2
Affiliation  

Both accurate experiments and a self-consistent theoretical simulation using the near-ABC or ab initio method have uncovered the anomalous changes in the junction voltage ( V j ) of GaN-based lasers (Li et al 2013 Appl. Phys. Lett . 102 123501, Feng et al 2018 J. Phys. D: Appl. Phys . 51 095102 and Feng et al Appl. Phys . B 124 39). Here, further accurate emission spectral characteristics and band-gap simulation of a GaN based laser diodes (LDs) confirmed that previous researchers may have confused the junction voltage ( V j ) and the separation between the two Fermi levels of electrons and holes in the active region divided by the electronic charge (Δ E f / e ). For the multiple-quantum wells (MQWs), there are obvious differences between them. For an ideal GaN-based LDs, despite the increase in junction voltage, physical quantities includin...

中文翻译:

重新定义基于GaN的多量子阱半导体激光二极管量子阱内部和外部的电子和空穴的准费米能级分离

精确的实验和使用近ABC或从头算方法的自洽理论模拟都发现了GaN基激光器结电压(V j)的异常变化(Li等人2013 Appl。Phys.Lett.102 123501 ,Feng等人,2018 J.Phys.D:Appl.Phys.51 095102和Feng等人,Appl.Phys.B 124 39)。在这里,基于GaN的激光二极管(LD)的进一步精确的发射光谱特性和带隙模拟证实,以前的研究人员可能混淆了结电压(V j)和有源电子和空穴的两个费米能级之间的分隔区域除以电荷(ΔE f / e)。对于多量子阱(MQW),它们之间存在明显的差异。对于理想的基于GaN的LD,尽管结电压增加了,但物理量仍然包括...
更新日期:2020-02-06
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