Air brick‐structured GeSe is first synthesized by a rapid box thermal deposition method, and the GeSe thin film with such air brick novel structure demonstrates advanced photoelectrochemical (PEC) performance. It is found that the electrode position of a few CdS nanoparticles (NPs) on a GeSe microair brick (MAB) prior to the chemical bath deposition (CBD) of CdS buffer affects the coverage/passivation efficiency of CdS onto GeSe MAB. In this case, the electrodeposited CdS particles were likely to be the seed for CdS growth/adsorption of Cd²⁺ during the subsequent CBD process and also could serve as active sites between the adsorbed layer and buffer layer for collecting electrons and facilitating their transfer, ultimately reducing the recombination loss. The PEC performance, especially the current density, is obviously improved (8 mA cm⁻² at 0 V_RHE) compared with that of a device without CdS NPs (3.6 mA cm⁻² at 0 V_RHE). Moreover, surface modification with an 80 nm atomic layer deposition TiO₂ protective layer not only slows the photocorrosion of the CdS layer to 5 h but also promotes the half‐cell solar‐to‐hydrogen efficiency to 1.47%. More than 180 μmol H₂ and 90 μmol O₂ are evolved during 3 h of sustained solar light illumination with the final Pt–TiO₂/CdS/CdS‐NP/GeSe MAB device.

中文翻译：

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用于高级太阳能水分解的三维GeSe微结构气砖光电阴极

航空砖结构的GeSe首先通过快速箱式热沉积法合成，具有这种新型航空砖结构的GeSe薄膜具有先进的光电化学（PEC）性能。发现在CdS缓冲液的化学浴沉积（CBD）之前，GeSe微风砖（MAB）上的一些CdS纳米颗粒（NPs）的电极位置会影响CdS在GeSe MAB上的覆盖/钝化效率。在这种情况下，电沉积的CdS粒子很可能是CdS生长/吸附Cd ²⁺的种子。在随后的CBD过程中，它还可以充当吸附层和缓冲层之间的活性位点，以收集电子并促进其转移，最终减少重组损失。与没有CdS NPs的设备（在0 V _RHE时为3.6 mA cm ^-2）相比，PEC性能（尤其是电流密度）得到了明显改善（在0 V _RHE时为8 mA cm ^-2）。此外，使用80 nm原子层沉积TiO ₂保护层进行表面改性不仅将CdS层的光腐蚀减慢至5 h，而且还将半电池的太阳能转化效率提高到1.47％。大于180μmolH ₂和90μmolO ₂最终的Pt-TiO ₂ / CdS / CdS-NP / GeSe MAB器件在持续的太阳光照射下3 h内便会析出。