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Usage and Experimental Tests of the Modified Waveguide Method for Measurement of the Complex Permittivity and Permeability of Materials
Physics of Wave Phenomena ( IF 1.4 ) Pub Date : 2019-12-14 , DOI: 10.3103/s1541308x19040101
M. P. Parkhomenko , D. S. Kalenov , I. S. Eremin , N. A. Fedoseev , V. M. Kolesnikova , Yu. L. Barinov

Results of the numerical experiment are presented, which allow considerably extending the range of the waveguide method capabilities in determination of the complex permittivity of materials. Two main methodological errors are estimated, which affect the measurement accuracy and are related to errors in determination of the sample boundary positions in the measuring section and to presence of an air gap between the sample and the wide wall of the waveguide. Calculations are performed in the centimeter and millimeter ranges for materials with a large real component of the permittivity (ε1 ⩾ 25) and tangents of the dielectric loss angle tan δε varying between 0.1 and 0.2. Ways of decreasing the errors are proposed. To decrease the measurement error caused by the inaccurate positioning of the sample boundaries, it is proposed to use measuring section-flanges with the length equal to the length of the sample. To decrease the error caused by the air gap between the sample and the wide wall of the waveguide, it is proposed to fill the gap with a nonconducting paste composed of finely dispersed copper powder mixed with petrolatum. The centimeter-range experiment on determination of the complex permittivity of high-ohmic silicon shows an appreciable decrease in the measurement error when the air gap is filled with the above paste. The presented method also allows the complex permeability of a material to be determined. The real component μ1 of the complex permeability of silicon as a dielectric is unity. This is experimentally confirmed.

中文翻译:

改进的波导方法在材料复介电常数和磁导率测量中的用途和实验测试

给出了数值实验的结果,其允许在确定材料的复介电常数时大大扩展波导方法能力的范围。估计了两个主要的方法学误差,这些误差影响测量精度,并且与确定测量部分中样品边界位置的误差以及样品与波导的宽壁之间存在气隙有关。计算在厘米和毫米范围为材料与介电常数(大实分量进行ε 1 ⩾25)和介电损耗角tanδ的切线δ ε在0.1到0.2之间变化。提出了减少误差的方法。为了减少由于样品边界定位不正确而导致的测量误差,建议使用长度等于样品长度的测量截面法兰。为了减少由样品和波导的宽壁之间的气隙引起的误差,建议用由细分散的铜粉和凡士林混合而成的不导电膏填充该间隙。确定高欧姆硅的复介电常数的厘米范围实验表明,当气隙中充满上述糊剂时,测量误差会明显降低。所提出的方法还允许确定材料的复数渗透率。实分量μ 1作为电介质的硅的复磁导率的一个是1。实验已证实这一点。
更新日期:2019-12-14
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